Abstract
It is experimentally demonstrated that the photoelectron trap depth of AgBr : I is unaffected by I addition. The trap density increases with both I content and with the size of the crystal. It is likely that the traps are on the surface of the microcrystals. Photoelectron decay data indicate that, after saturation of a few deep traps, the decay rate for temperatures above 60 K is determined by diffusion of interstitial silver ions (Ag+i) to the sites of trapped electrons. The activation energy for Ag+i diffusion in AgBr : I is higher than in AgBr, and the concentration of Ag+i increases with both crystal size and I content. These results are explained in terms of a more uniform Ag+i distribution and a probable localization of Ag+i near the I impurity.