Application of heterojunction FET to power amplifierfor cellular telephone

26 May 1994

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 30 (11) , 906-907
https://doi.org/10.1049/el:19940571

Abstract

The high power properties of heterojunction FETs (H-FET) have been investigated. The H-FETs are fabricated by using a strained AlGaAs/GaInAs/GaAs/AlGaAs selectively-doped double heterojunction structure. As compared with GaAs MESFETs, the H-FETs show 1.5 dB higher saturation power and 8% higher power-added efficiency than those of the MESFETs, at 950 MHz and 4.7 V. The H-FETs are more suitable for the power amplifier of cellular telephones.

Keywords

POWER AMPLIFIER
4.7 V
CELLULAR TELEPHONE
ALGAAS/GAINAS/GAAS/ALGAAS
HETEROJUNCTION FET
ALGAAS-GAINAS-GAAS-ALGAAS
POWER-ADDED EFFICIENCY
8 PERCENT
950 MHZ
HIGH POWER PROPERTIES
STRAINED SELECTIVELY-DOPED DOUBLE HETEROJUNCTION STRUCTURE
SATURATION POWER
H-FETS

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