Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETs
- 15 December 1999
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 273-274, 1022-1026
- https://doi.org/10.1016/s0921-4526(99)00628-6
Abstract
No abstract availableKeywords
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