Titanium-oxide films made by rf diode sputtering from a compound target
- 1 August 1987
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (3) , 1035-1041
- https://doi.org/10.1063/1.339760
Abstract
This paper describes thin‐film stress, stoichiometric ratio, deposition rate, and refractive index of an rf‐sputtered titanium‐oxide dielectric film. High compressive stresses (1010 dyn/cm2) were obtained, which can be correlated to the argon sputtering gas incorporation and peening effect. The process dependencies of the stoichiometric ratio, deposition rate, and refractive index are also described.This publication has 5 references indexed in Scilit:
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