Localised electron states in semiconductors

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Abstract
A detailed account is given of the formalism of localised electronic states (deep traps or levels) which are produced by substitutional transition metal impurities in III-V semiconductors. The importance of including the two particle Coulomb interactions between the electrons is emphasised throughout. The concepts of bonding is briefly discussed, but the review mainly concentrates on the idea that introducing transition metal impurities results in there being extra, d-like orbitals available to accommodate electrons. These in turn produce 'configurations' and 'terms' similar to those found with free transition metal ions and with the ions in ionic crystals. As with the latter it has been found that a powerful way of accounting for a large amount of experimental information is through the concepts of effective and spin Hamiltonians, with the parameters chosen to agree with experiment. The discussion deals with the question of how such effective forms can be expected to arise.

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