Analysis of camel gate FET's (CAMFET's)

1 March 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 30 (3) , 212-216
https://doi.org/10.1109/t-ed.1983.21102

Abstract

The performance of camel gate GaAs FET's and its dependence on device parameters has been described. In particular, the dependence of the performance on the doping-thickness product of the p⁺layer was examined. Theoretical calculations indicate that using large p⁺doping-thickness products provides relatively voltage-independent transconductances and large reverse breakdown voltages, both of which are desirable in large signal applications. Decreasing the p⁺doping increases the transconductance, which is desirable in logic applications. Comparison with performance of fabricated devices indicates good agreement between theory and experiment over a wide range of structural parameters. Microwave measurements on CAMFET's have yielded a gain of 10 dB at 9 GHz.

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