Emitter current-crowding in high-voltage transistors
- 1 April 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 25 (4) , 465-471
- https://doi.org/10.1109/t-ed.1978.19108
Abstract
The problem of emitter current-crowding is treated for the case where the base is heavily doped with respect to the collector and the transistor is operating in the quasisaturation region. Closed-form solutions for terminal currents and current gain are derived in terms of elliptic integrals and other related functions. Good agreement with experimental data is demonstrated and various design implications of the theory are discussed.Keywords
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