Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge
- 1 October 1963
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 2 (10) , 602-612
- https://doi.org/10.1143/jjap.2.602
Abstract
The incorporation of impurities into single crystal layers of Ge grown by the disproportionation reaction 2GeI2\rightleftarrowsGe+GeI4, is studied thermodynamically. Impurity iodides formed in the source region are carried over substrate wafers where impurity atoms are liberated mainly through the reduction by Ge or GeI2 . The amount of impurity incorporated depends largely upon the yields of reactions involved in the doping process, and the analysis leads to the conclusion that Sb, P and As are favorable as donor impurities while Ga, In and BI3 as acceptor impurities.Keywords
This publication has 4 references indexed in Scilit:
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- Surface Kinetics and Physics Investigation of the Reaction between Single-Crystal Germanium and IodineJournal of Applied Physics, 1961
- Vapor-Deposited Single-Crystal GermaniumJournal of Applied Physics, 1960
- The Heat of Oxidation of Germanous Iodide to Germanic AcidJournal of the American Chemical Society, 1952