Optical injection locking of X-band FET oscillator using coherent mixing of GaAlAs lasers

29 September 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (20) , 848-850
https://doi.org/10.1049/el:19830577

Abstract

A 9.6 GHz GaAs FET oscillator was optically injection locked at the fundamental frequency. The locking bandwidth was 1.6 MHz. The optical injecting signal was generated using coherent mixing of two semiconductor lasers injection locked by different FM sidebands of another laser.

Keywords

FM SIDEBANDS
LOCKING BANDWIDTH
COHERENT MIXING
GAAS MESFET
OPTICAL INJECTION LOCKING
III-V SEMICONDUCTORS
X-BAND
1.6 MHZ
LASER BEAM APPLICATIONS
GAALAS LASERS
FREQUENCY STABILISATION
SEMICONDUCTOR LASERS
MICROWAVE OSCILLATORS
9.6 GHZ

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