Effect of ohmic contacts on buffer leakage of GaN transistors
- 26 June 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 27 (7) , 529-531
- https://doi.org/10.1109/led.2006.876306
Abstract
The effect of ohmic contacts on the buffer leakage of GaN transistors is presented. The buffer leakage for AlGaN/GaN high-electron mobility transistors and GaN MESFETs grown on the same underlying buffer was observed to be different. Controlled experiments show that the increased buffer leakage is due to the nature of the alloyed ohmic contacts and can be minimized if they are screened by the Si doping or by the two-dimensional electron gas.Keywords
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