Short-range order in germanium-silicon alloys (effect on electronic properties)
- 28 May 1977
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 10 (10) , 1667-1673
- https://doi.org/10.1088/0022-3719/10/10/010
Abstract
The cluster-Bethe-lattice method and a simple model Hamiltonian have been used to determine the influence of short-range order on the valence band and direct optical gap of Ge-Si alloys. The results predict that an ionic gap occurs for only a very narrow range of concentration and correlation, and that the deviation from linearity of the direct optical gap decreases as the probability of Ge-Si bond increases. A possible method of deriving the degree of short-range order from photoemission studies is suggested.Keywords
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