Effect of Silver Dopant on Optical and Electrical Properties of Solution-Grown Cadmium Selenide Thin Films

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Abstract
In the present study, n-type thin films of CdSe have been grown onto glass substrates by using a solution growth technique. Different doping concentrations of Ag were doped in pure CdSe films, and the effects on the optoelectronic properties were observed. The optical band gaps (E g) of these films were found to be dependent on doping concentration i.e., they decrease from 1.70±0.02 eV to 1.50±0.03 eV as doping concentration increases from 0.1 wt% to 25 wt%. Other optical parameters such as absorption coefficient, α, refractive index `n' and dielectric constant `ε' were also computed. The electrical conductivity of pure CdSe films was obtained as 10-7 Ω-1 cm-1 while doped films have 10-4 Ω-1 cm-1. Thermal activation energy of these films was estimated. Carrier concentration, mobility, thermoelectric power and photosensitivity were also studied at different dopant concentrations.