Voltage-controlled DNR in unijunction transistor structure
- 1 September 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 21 (9) , 604-605
- https://doi.org/10.1109/t-ed.1974.17973
Abstract
Modified structure of a conventional diffused planar unijunction transistor (UJT) having a feasible voltage-controlled differential negative resistance (DNR) characteristic is developed using high-resistivity n-type silicon. The origin of a voltage-controlled DNR is qualitatively explained. A quantitative analysis is given and a comparison with experimental results is made.Keywords
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