A new technology for epitaxial II-VI compound semiconductor devices
- 1 April 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (4) , 937-938
- https://doi.org/10.1109/t-ed.1987.23021
Abstract
ZnS and ZnSe are grown by metalorganic chemical-vapor deposition over GaAs and GaAlAs chemi-stop layers on a GaAs substrate. The III-V layers allow selective chemical removal of the substrate in order to expose the ZnS. The device allows investigation of the electrical and optical properties of epitaxial wide-gap II-VI compounds in the absence of any influence from the substrate material.Keywords
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