Carrier induced ferromagnetic interactions in p-doped Zn(1-x)MnxTe epilayers
Preprint
- 8 October 1999
Abstract
p-type doping of molecular-beam-epitaxy grown layers of the diluted magnetic semiconductor Zn(1-x)MnxTe is achieved by using an active nitrogen cell. The strong interaction between the localized Mn spins and the holes deeply modifies the transport properties (metal-insulator transition, spin-dependent Hall effect). In spite of the weak localization of the carriers at low temperature, the holes clearly induce a ferromagnetic interaction between the localized spins, which is discussed as a function of Mn content and hole concentration.Keywords
All Related Versions
- Version 1, 1999-10-08, ArXiv
- Published version: Journal of Applied Physics, 87 (9), 6451.
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