Copper Indium Disulfide Films by Close Spacing Chemical Transport
- 1 August 1985
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 132 (8) , 2020-2022
- https://doi.org/10.1149/1.2114273
Abstract
Nearly stoichiometric films have been deposited on alumina and graphite substrates at 650°–700°C by the close spacing chemical vapor transport technique. The source material was synthesized from the elements in a sealed fused silica tube, and a mixture of hydrogen and iodine or hydrogen and hydrogen iodide was used as the transport agent. The composition, microstructure, crystallographic, and electrical properties of the films were investigated.Keywords
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