Chemical Vapor Deposition of Anti-Reflective Layer Film for Excimer Laser Lithography
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1S) , 486-490
- https://doi.org/10.1143/jjap.33.486
Abstract
We report a new anti-reflective layer (ARL) film for KrF excimer lasers, which makes excimer laser lithography applicable to mass production of devices with a design rule tighter than 0.35 µm. The ARL film, which is composed of SiO x N y :H, was deposited with a higher SiH4/N2O ratio than in conventional PECVD (Plasma Enhanced Chemical Vapor Deposition) conditions. The SiO x N y :H films, with optimal refractive indices, were easily deposited by varying the SiH4/N2O ratio as a PECVD parameter. Using the SiO x N y :H film to fabricate a 16MSRAM gate structure, variations in photoresist absorption were significantly reduced.Keywords
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