Titanium disilicide formation by sputtering of titanium on heated silicon substrate
- 15 September 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (6) , 673-675
- https://doi.org/10.1063/1.95352
Abstract
We have sputter deposited titanium on bare silicon substrates at elevated temperatures. We find that at a substrate temperature of about 515 °C titanium silicide is formed due to the reaction of the titanium with the Si. The resistivity of the silicide is about 15 μΩ cm and it is not etchable in a selective titanium etch. This process can have applications in low-temperature, metal-oxide-semiconductor self-aligned silicide formation for very large scale integratedKeywords
This publication has 4 references indexed in Scilit:
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