Threshold voltage of submicron Ga 0.47 In 0.53 As HIGFETs
- 20 July 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (15) , 975-976
- https://doi.org/10.1049/el:19890652
Abstract
We present threshold voltage data for Al0.48In0.52As/Ga0.47In0.53As/InP heterostructure insulated gate FETs (HIGFETs) with gate lengths from 1.2μm to 0.4μm. The refractory-gate, self-aligned fabrication process was applied to MBE-grown structures with 300Å Ga0.47In0.53As channels and semi-insulating superlattice buffers, to achieve sharp pinchoff with excellent threshold uniformity. HIGFETs with L = l.2μm showed a threshold voltage of −0.076 ± 0.019V, making them well-suited to application in direct-coupled FET logic (DCFL) circuits.Keywords
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