Ambipolar Diffusion and Electron Attachment in Nitric Oxide in the Temperature Range 196 to 358°K
- 1 November 1965
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 140 (3A) , A748-A755
- https://doi.org/10.1103/PhysRev.140.A748
Abstract
Ambipolar diffusion and electron attachment rates were measured in nitric oxide at pressures from 0.01 to 16 Torr and at temperatures from 196 to 358°K. The gas was photoionized by single pulses of ultraviolet radiation, at and near Lyman- from a hydrogen lamp. Pulse lengths ranged from 10 to 300 μsec and ionization levels were kept low to reduce electron-ion recombination. Rates for the latter process are reported in a separate paper. Electron loss rates were measured by a microwave-cavity method used to record the decay following a single ionizing pulse. Ion identification was made by a mass spectrometer which sampled the ions diffusing through a small hole in the wall of the microwave cavity. Ultrahigh-vacuum techniques were used in gas purification and in production and measurement of ionization. The diffusion results are to some extent consistent with the theory of diffusion of electrons and a single positive ion species in the presence of negative ions. The mass-spectrometer observations indicate that is the dominant positive ion in photoionized NO at all pressures. The measured mobility of for 298°K, referred to 0°C and 760 Torr, is 1.9±0.2 , corresponding to a of 83±8 Torr . The mobility decreases slowly as the gas temperature is raised from 196 to 358°K. At gas densities near , the attachment results are characteristic of a three-body process, but at higher densities there is an anomalous rise in the attachemnt coefficient. The apparent three-body attachment coefficients for densities near are 6.8±0.7× at 196°K, 2.2±0.2× at 298°K, and 1.1±0.1× at 358°K and exhibit approximately at temperature dependence. The principal negative ion observed with the mass spectrometer was , and no or ions were detected. Direct attachment to , present as a minute impurity, seems unlikely; the ions may be formed by rapid charge transfer from a primary negative ion or by an attachment reaction involving rearrangement.
Keywords
This publication has 28 references indexed in Scilit:
- Electron-Ion Recombination in NitrogenPhysical Review B, 1965
- Recombination Coefficient of Electrons with NO+ Ions in Shock-Heated AirPhysics of Fluids, 1964
- Measurements of the Attachment of Low-Energy Electrons to Oxygen MoleculesPhysical Review B, 1962
- Rates of Electron Removal by Recombination, Attachment, and Ambipolar Diffusion in Nitric Oxide PlasmasThe Journal of Chemical Physics, 1961
- Electron-Ion Recombination Coefficients in Nitrogen and in OxygenPhysical Review Letters, 1961
- Ions in NitrogenPhysical Review B, 1958
- Drift Velocities of Ions in Nitrogen at Various TemperaturesPhysical Review B, 1957
- Ionic Drift Velocities and Electron Attachment Coefficients in OxygenPhysical Review B, 1957
- Positive Ions in the Afterglow of a Low Pressure Helium DischargePhysical Review B, 1952
- Measurements of Ambipolar Diffusion in HeliumPhysical Review B, 1949