Photo-assisted anisotropic etching of phosphorus-doped polycrystalline silicon employing reactive species generated by a microwave discharge

Abstract
An anisotropic etching of heavily phosphorus‐doped polycrystalline silicon is achieved by protecting the etched sidewall with polymerized film which results from the reaction of chlorine species and methyl methacrylate. Chlorine species are generated by a microwave discharge in Cl2 in the portion separated from a reaction chamber with a laser beam irradiation system. The laser beam enhances the removal of the polymerized film on the illuminated surface except the sidewall. And the Si/SiO2 etch rate ratio is infinite in this system.

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