Effects of UV irradiation on the inverted surface layer in semiconductor-insulator-semiconductor devices
- 1 February 1984
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (3) , 324-325
- https://doi.org/10.1063/1.94740
Abstract
Irradiating semiconductor‐insulator‐semiconductor devices with 3650 Å light increases the J0 associated with the minority‐carrier injection/diffusion current, resulting in a concomitant decrease in Voc. This increase in J0 is attributed to a decrease in carrier lifetime in the inverted surface layer as a result of UV irradiation.Keywords
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