Temperature Dependence of Luminescence Decay Time of InP Quantum Disks

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Abstract
We measured temperature dependence of luminescence decay time of self-assembled InP dots in GaInP lattice-matched to GaAs. The radiative lifetime of InP-dot luminescence is independent of temperature below ∼40 K and is linear with temperature between ∼40 and ∼120 K. These two features in the two temperature regimes are characteristic of zero-dimensional and two-dimensional structures, respectively. This temperature behavior of the lifetime is thought to be caused by the disklike shape of the InP dots; the dot lateral widths are longer than their heights, and thus they have an intermediate character between zero-dimension and two-dimensions.