MOS surface potential and the gross nonuniformity
- 30 April 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (4) , 507-511
- https://doi.org/10.1016/0038-1101(73)90190-1
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966