A Relationship Between Segregated Arsenic in GaAs and Photoluminescence and Kinetics of Arsenic Segregation at Room Temperature
- 1 February 1988
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 135 (2) , 496-499
- https://doi.org/10.1149/1.2095643
Abstract
Arsenic segregation in passivation/insulation is a major problem in device applications. The extent of arsenic segregation is related to the intensity of photoluminescence observed when a treated surface is exposed to a laser beam. The relationship is then used to determine the kinetics of the arsenic segregation, which involves a solid‐solid reaction for oxygen extraction by gallium from . The results are applied to literature data. The kinetics determined indicate that the solid‐solid reaction could be elementary, at least with respect to the gallium atom concentration.Keywords
This publication has 0 references indexed in Scilit: