Thermal dissociation energy of the Si-H complex in n-type GaAs
- 22 July 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (4) , 461-463
- https://doi.org/10.1063/1.105436
Abstract
The thermal dissociation kinetics of the hydrogen‐donor complex in n‐type GaAs:Si were determined from bias‐temperature anneals on hydrogenated Schottky‐barrier diodes. The anneal kinetics are approximately first order and yield a thermal dissociation energy for the Si‐H complex of 1.2±0.1 eV. Depth redistribution of the Si‐H complexes both within the depletion layer of biased diodes and in the field‐free region of unbiased diodes suggests that hydrogen in n‐type GaAs can migrate as a negatively charged species.Keywords
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