High-power AlGaAs laser with a thin tapered-thickness active layer

13 February 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (4) , 217-218
https://doi.org/10.1049/el:19860151

Abstract

A laser whose active layer is thinner near the mirror facet than the inner region is fabricated. Lasers with narrow beam divergence perpendicular to the junction, as narrow as 10°-20°, are obtained with little increase of threshold current. For lasers emitting at 780 nm, stable 30 mW operation at 50°C has been confirmed without obvious degradation over 4000 h.

Keywords

ALGAAS LASER
TAPERED-THICKNESS ACTIVE LAYER
RIDGED SUBSTRATE
SEMICONDUCTOR LASERS
30 MW OPERATION
780 NM
LIQUID PHASE EPITAXY
LPE
50°C

This publication has 0 references indexed in Scilit: