The evolution of the Si/SiO2 interface in buried oxide layers formed by high dose oxygen implantation into silicon
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 19-20, 290-293
- https://doi.org/10.1016/s0168-583x(87)80059-9
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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