Deposition of Polycrystalline Silicon thin Films by Plasma Enhanced CVD
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
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This publication has 1 reference indexed in Scilit:
- Silicon epitaxy at 650–800 °C using low-pressure chemical vapor deposition both with and without plasma enhancementJournal of Applied Physics, 1985