The performance of GaAs field-effect transistors as microwave mixers
- 1 March 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 61 (3) , 399-400
- https://doi.org/10.1109/PROC.1973.9050
Abstract
The performance of Schottky barrier gate field-effect transistors (FET's) as single-ended microwave mixers at 3 GHz is described. An increase in dynamic range of approximately 10 dB over conventional diode mixers is reported although the noise figures of FET miters at present are higher than for diode mixers.Keywords
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