Oxidation of GaAs(110): New results and models
- 15 October 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 30 (8) , 4839-4841
- https://doi.org/10.1103/physrevb.30.4839
Abstract
The oxidation of ultra high-vacuum-cleaved GaAs(110) surfaces has been studied with high-resolution, core-level photoemission excited with synchrotron radiation. The oxidation is spatially and chemically inhomogeneous, and both subsurface oxidation and multibonding geometries occur already at submonolayer coverages.Keywords
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