Epitaxial Lateral Overgrowth of Si by LPE with Sn Solution and Its Orientation Dependence

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Abstract
A single crystal Si layer was grown over SiO2 film by epitaxial lateral overgrowth (ELO) using LPE, and the dependence of the ratio of the lateral to the vertical growth rates on crystal orientation was investigated. Sn was used as a solution, and it was found that the growth surface was flat and completely mirror like. The lateral growth had a singularity when the line seed was aligned in just the orientation, but it was almost constant when the orientation was varied around the orientation. The time dependence of the growth was investigated, and it was found that both the lateral width and the vertical thickness were approximately proportional to t 1/2, and the volume of the growth was proportional to t 0.9. Sirtl etch revealed that almost no etch pits were observable on the ELO layer. This result shows that ELO by LPE yields SOI films with an extremely good crystal quality.

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