Asymmetric degradation of electron and hole μτ-products in a-Si:H/a-SiC:H multilayers under illumination
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 1143-1146
- https://doi.org/10.1016/s0022-3093(05)80325-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Limitations of interface sharpness in a-Si:H/a-SiC:H multilayersApplied Surface Science, 1991
- Effect of the dangling-bond charge on the ambipolar diffusion length in a-Si: HPhilosophical Magazine Letters, 1991
- Solution of the μτ problem in a-Si: HPhilosophical Magazine Part B, 1991
- Ambipolar transport in amorphous semiconductors in the lifetime and relaxation-time regimes investigated by the steady-state photocarrier grating techniquePhysical Review B, 1988
- Characterization of a-Si1−xCx:H/a-Si:H and a-SiN:H/a-Si:H heterojunctions by photothermal deflection spectroscopyJournal of Applied Physics, 1988