Auger effect as the origin of the fast-luminescent band of freshly anodized porous silicon
- 15 August 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 60 (7) , 4450-4453
- https://doi.org/10.1103/physrevb.60.4450
Abstract
Time-resolved photoluminescence measurements are performed on oxidized and fresh porous silicon at room temperature. Comparing the evolution of the nanosecond time-delayed photoluminescence (PL) in both cases, a new feature of the PL spectra is identified: a fast red band, present both in fresh and aged samples. The nonlinear excitation intensity dependence of this component is described by a simple model, where the Auger effect inside isolated silicon quantum dots plays the dominant role.Keywords
This publication has 18 references indexed in Scilit:
- Hole burning spectroscopy of porous siliconPhysical Review B, 1998
- Nonlinear optical effects in porous silicon: Photoluminescence saturation and optically induced polarization anisotropyPhysical Review B, 1997
- Auger relaxation processes in semiconductor nanocrystals and quantum wellsJournal of Luminescence, 1996
- Picosecond and millisecond dynamics of photoexcited carriers in porous siliconPhysical Review B, 1996
- Auger and Coulomb Charging Effects in Semiconductor NanocrystallitesPhysical Review Letters, 1995
- Observation of velocity-tuned resonances in the reflection of atoms from an evanescent light gratingPhysical Review A, 1994
- Time-resolved measurements of carrier recombination in experimental semiconductor-doped glasses: Confirmation of the role of Auger recombinationApplied Physics Letters, 1993
- Quantum size effects on the exciton energy of CdS clustersPhysical Review B, 1990
- Quantum-size effects of interacting electrons and holes in semiconductor microcrystals with spherical shapePhysical Review B, 1988
- Quantum size effect in semiconductor microcrystalsSolid State Communications, 1985