Control of epitaxial growth of pulsed laser deposited LiNbO3 films and their electro-optic effects

Abstract
Epitaxial LiNbO3 films with two orientations were grown on sapphire (112̄0) substrates using pulsed laser deposition. The film deposited at a low oxygen pressure (i.e., 10−4 Torr) was epitaxially grown along the a axis, and that at a oxygen pressure of 10−1 Torr was epitaxially grown along the c axis. Electro‐optic properties of these films were quite different, demonstrating importance of controlling the epitaxial growth behaviors. The birefringence measurements of the LiNbO3 (112̄0) film showed a quadratic electro‐optic behavior with an effective quadratic coefficient of 2.38×10−15 m2/V2. This behavior was analyzed in terms of the quadratic electro‐optic tensor for LiNbO3.

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