New method for the extraction of MOSFET parameters

28 April 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (9) , 543-545
https://doi.org/10.1049/el:19880369

Abstract

A new method for the extraction of the MOSFET parameters is presented. The method, which relies on combining drain current and transconductance transfer characteristics, enables reliable values of the threshold voltage V₁, the low field mobility μ₀ and the mobility attenuation coefficient θ to be obtained.

Keywords

THRESHOLD VOLTAGE
MOBILITY ATTENUATION COEFFICIENT
EXTRACTION
DRAIN CURRENT
TRANSCONDUCTANCE TRANSFER CHARACTERISTICS
MOSFET PARAMETERS
LOW FIELD MOBILITY

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