Vertical drift of P–E hysteresis loop in asymmetric ferroelectric capacitors
- 1 June 1996
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (11) , 8634-8637
- https://doi.org/10.1063/1.362485
Abstract
One kind of distortion in P–Ehysteresis of ferroelectric thin‐film capacitors, namely vertical drift of P–Ehysteresis loop, is discussed. This kind of distortion, usually observed in asymmetric ferroelectric thin‐film capacitors, originates from the asymmetric conduction of the capacitor at different polarities. The shapes of the distorted hysteresis loops are studied by applying a simple circuit model with respect to the measuring frequency, applied voltage amplitude, and different leakage conductance, etc. and are verified with experiment.This publication has 13 references indexed in Scilit:
- Influence of rapid thermal annealing on pyrochlore/perovskite phase formation in laser ablated Pb(Zr,Ti)O3thin filmsIntegrated Ferroelectrics, 1995
- Depolarization and hysteresis loop asymmetry in PZT thin films with self polarizationFerroelectrics, 1994
- Photo-Induced and Electrooptic Properties of (Pb,La)(Zr,Ti)O3 FilmsMRS Proceedings, 1993
- Ferroelectric memoriesFerroelectrics, 1992
- Modeling ferroelectric capacitor switching with asymmetric nonperiodic input signals and arbitrary initial conditionsJournal of Applied Physics, 1991
- Fatigue and switching in ferroelectric memories: Theory and experimentJournal of Applied Physics, 1990
- Ferroelectronic ram memory family for critical data storageFerroelectrics, 1990
- Ferroelectric MemoriesScience, 1989
- A new ferroelectric memory device, metal-ferroelectric-semiconductor transistorIEEE Transactions on Electron Devices, 1974
- Rochelle Salt as a DielectricPhysical Review B, 1930