Melting threshold of crystalline and amorphized Si irradiated with a pulsed ArF (193 nm) excimer laser
- 1 April 1988
- journal article
- solids and-materials
- Published by Springer Nature in Applied Physics A
- Vol. 45 (4) , 361-364
- https://doi.org/10.1007/bf00617943
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Solidification of highly undercooled liquid silicon produced by pulsed laser melting of ion-implanted amorphous silicon: Time-resolved and microstructural studiesJournal of Materials Research, 1987
- Time-resolved reflectivity measurements on silicon and germanium using a pulsed excimer KrF laser heating beamPhysical Review B, 1986
- The temperature dependence of the refractive index of silicon at elevated temperatures at several laser wavelengthsJournal of Applied Physics, 1986
- Time-resolved ellipsometry measurements of the optical properties of silicon during pulsed excimer laser irradiationApplied Physics Letters, 1985
- Pulsed excimer (KrF) laser melting of amorphous and crystalline silicon layersJournal of Applied Physics, 1985
- Pulsed-Laser Melting of Amorphous Silicon: Time-Resolved Measurements and Model CalculationsPhysical Review Letters, 1984
- Pulsed laser melting of amorphous silicon layersApplied Physics Letters, 1984
- Time-resolved optical studies of silicon during nanosecond pulsed-laser irradiationPhysical Review B, 1982
- Dynamics of Q-switched laser annealingApplied Physics Letters, 1979