GaAs 8 GHz-band high power FET

1 December 1974

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 285-287
https://doi.org/10.1109/iedm.1974.6219746

Abstract

A GaAs power FET exhibiting 0.7 W saturation output power and 45% drain efficiency applying 6 V at 8 GHz, has been developed. An interdigitated source and drain electrode, and an overlaid gate electrode to connect in parallel 52 gates, are introduced to achieve 2 μm long and 2600μm wide Schottky gate FET.

Keywords

RNA
FETS
GALLIUM ARSENIDE
ABSTRACTS
CONTACTS
LOGIC GATES
CUTOFF FREQUENCY

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