Effects of gate structure on static induction thyristor

1 January 1980

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1980.189920

Abstract

Basic characteristics of static induction thyristor have been discussed experimentally by fabricating buried diffused gate structure devices having various gate to gate spacing. The decrease of the gate to gate spacing increases a forward voltage blocking gain. Here the forward voltage blocking gain is varied from 10 to 700. The gate turn-off current increases continuously with increasing the forward voltage blocking gain, while the forward voltage drop is kept almost constant for the variation of the forward voltage blocking gain from 10 to 700. Switching speed is optimized at a certain forward voltage blocking gain such as 300 to 500.

Keywords

THYRISTORS
CATHODES
IMPURITIES
ANODES
SEMICONDUCTOR DIODES
VOLTAGE CONTROL
CHARGE CARRIER PROCESSES
LOW VOLTAGE
CURRENT DENSITY
BREAKDOWN VOLTAGE

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