In situ core-level photoelectron spectroscopy study of indium segregation at GaInAs/GaAs heterojunctions grown by molecular-beam epitaxy
- 1 July 1993
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 11 (4) , 1413-1417
- https://doi.org/10.1116/1.586951
Abstract
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