Modulated-reflectance spectroscopy of InP doping superlattices
- 15 March 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (6) , 4410-4413
- https://doi.org/10.1103/physrevb.33.4410
Abstract
Photoreflectance (PR) measurements in doping superlattices show that the photoexcited carriers modulate the subband levels in a very predictable fashion. We demonstrate the utility of the PR technique for probing details of quantum-size effects in doping superlattices.Keywords
This publication has 18 references indexed in Scilit:
- Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctionsApplied Physics Letters, 1985
- Electronic states and thicknesses of GaAs/GaAlAs quantum wells as measured by electroreflectance and spectroscopic ellipsometryJournal of Applied Physics, 1984
- Raman Scattering Resonant with Quasi-Two-Dimensional Excitons in Semiconductor Quantum WellsPhysical Review Letters, 1983
- n-i-p-i doping superlattices—metastable semiconductors with tunable propertiesJournal of Vacuum Science & Technology B, 1983
- Observation of Superlattice Effects on the Electronic Bands of Multilayer HeterostructuresPhysical Review Letters, 1981
- Electrical and Optical Properties of Crystals with “nipi‐Superstructure”Physica Status Solidi (b), 1972
- Electron States in Crystals with “nipi‐Superstructure”Physica Status Solidi (b), 1972
- Photoreflectance Line Shape at the Fundamental Edge in Ultrapure GaAsPhysical Review B, 1970
- Ge-Aqueous-Electrolyte Interface: Electrical Properties and Electroreflectance at the Fundamental Direct ThresholdPhysical Review B, 1970
- Dependence of photoreflectance on space charge electric fields in GeSolid State Communications, 1970