Iron silicide thin film formation at low temperatures
- 1 February 1975
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 25 (2) , 415-422
- https://doi.org/10.1016/0040-6090(75)90059-0
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Structure and growth kinetics of Ni2Si on siliconThin Solid Films, 1975
- Implanted noble gas atoms as diffusion markers in silicide formationThin Solid Films, 1975
- Evaluation of glancing angle X-ray diffraction and MeV 4He backscattering analyses of silicide formationThin Solid Films, 1974
- Formation kinetics and structure of Pd2Si films on SiSolid-State Electronics, 1973
- The stopping of 4He ions in elemental matterThin Solid Films, 1973
- The growth and transformation of Pd2Si on (111), (110) and (100) SiThin Solid Films, 1973
- Principles and applications of ion beam techniques for the analysis of solids and thin filmsThin Solid Films, 1973
- True diffusion current of substrate ions as the rate-controlling factor of surface film growthPhysica Status Solidi (a), 1973