Experimental evidence for trap-induced photoconductive kink in AlGaAs/GaAs HEMTs

5 July 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (14) , 1094-1095
https://doi.org/10.1049/el:19900708

Abstract

The microwave small-signal and high frequency noise performance of AlGaAs/GaAs HEMTs have been assessed, both with and without illumination at room temperature. The measurements were carried out over the bias range where the photo-induced kink in the DC output characteristics is observed. The results obtained have been compared with our previously reported kink phenomenon in the output characteristics of these devices. The postulated electron trapping mechanism is confirmed as the cause of the kink

Keywords

PHOTO-INDUCED KINK
WITHOUT ILLUMINATION
ROOM TEMPERATURE
MICROWAVE SMALL-SIGNAL PERFORMANCE
HIGH FREQUENCY NOISE PERFORMANCE
PARASITIC PHENOMENA
HEMTS
KINK PHENOMENON
DC OUTPUT CHARACTERISTICS
ELECTRON TRAPPING MECHANISM
OUTPUT CHARACTERISTICS
SEMICONDUCTORS
ALGAAS-GAAS
TRAP-INDUCED PHOTOCONDUCTIVE KINK
BIAS RANGE
ILLUMINATION EFFECTS

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