Structure and magnetic properties of RF reactively sputtered Iron nitride thin films
- 1 September 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 23 (5) , 3636-3638
- https://doi.org/10.1109/tmag.1987.1065385
Abstract
The structure and magnetic properties of iron nitride thin films deposited by rf reactive sputtering under various sputtering conditions have been investigated. The amount of nitrogen partial pressure plays a dominant role in determining the composition of the films which is responsible for its magnetic properties. Either single phase or mixed phase compounds can be obtained through the control of the nitrogen partial pressure. The application of negative substrate bias affects the microstructure of the films which accounts for the variation of the coercivity. These films cover a wide range of magnetic characteristics (Hc from 2.5 to 360 Oe with equivalent Ms from 1610 to 185 emu/c.c.) which can be applied to high density magnetic recording materials.Keywords
This publication has 5 references indexed in Scilit:
- Magnetic properties of iron nitride thin films with high corrosion-resistanceIEEE Transactions on Magnetics, 1986
- Iron-Nitride Thin Films Prepared by Arc-Discharge-Type Ion-PlatingJapanese Journal of Applied Physics, 1984
- Synthesis of iron-nitride films by means of ion beam depositionIEEE Transactions on Magnetics, 1984
- Synthesis of Fine Fe4N Powder and Its Magnetic CharacteristicsJapanese Journal of Applied Physics, 1982
- Recording tapes using iron nitride fine powderIEEE Transactions on Magnetics, 1981