Formation of ultra-thin buried CoSi2 layers by ion implantation in (100) Si
- 1 November 1991
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 53, 273-277
- https://doi.org/10.1016/0169-4332(91)90276-p
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Antiparallel crystal orientation in CoSi2 epitaxial bilayers formed by ion implantationApplied Physics Letters, 1990
- Temperature and energy dependence of ion-beam synthesis of epitaxial Si/CoSi2/Si heterostructuresJournal of Applied Physics, 1990
- Formation of continuous CoSi2 layers by high Co dose implantation into Si(100)Journal of Applied Physics, 1990
- Ion beam synthesis of heteroepitaxial Si/CoSi2/Si structuresJournal of Applied Physics, 1990
- Mesotaxy: Single-crystal growth of buried CoSi2 layersApplied Physics Letters, 1987
- Synthesis of Buried Silicon Compounds Using Ion ImplantationMRS Proceedings, 1987