Low-loss ridge optical waveguides in quarternary InGaAlAs/InP grown by MBE

26 February 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (5) , 235-236
https://doi.org/10.1049/el:19870166

Abstract

Low-loss waveguiding at 1.55 μm wavelenght in quarternary InGaAlAs grown on InP by molecular-beam epitaxy is demonstrated for the first time. Ridge waveguides with length up to 1.8 cm width between 1.3 and 50 μm have losses as low as 2.2dB/cm, showing the potential of this materials systems for high-performance waveguide devices.

Keywords

MBE
MOLECULAR-BEAM EPITAXY
1.8 CM
1.55 MICRON
HIGH-PERFORMANCE WAVEGUIDE DEVICES
LOW LOSS OPTICAL WAVEGUIDES
INP
RIDGE OPTICAL WAVEGUIDES
IN GAALAS-INP

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