Thermally stable tantalum nitride/silicon Schottky barriers

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Abstract
Tantalum nitride films deposited by reactive sputtering in an rf magnetron sputtering system have been found to form excellent Schottky barriers on n-type Si with an effective barrier height of 0.74 eV and an ideality factor of <1.1. Following a postdeposition 500 °C anneal, the Au/Ti–W/TaN/n-Si structures exhibit little degradation of electrical properties when sustained at that temperature. The current–voltage characteristics begin to degrade at 600 °C, and evaluation of the capacitance–voltage data of degraded devices shows a rapid rise in surface donor concentration at anneal temperatures above 600 °C, evidently caused by the penetration of Ta (a deep donor in Si) into Si.

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