Low temperature ohmic contacts to gallium arsenide using In and Al
- 1 March 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 23 (3) , 374
- https://doi.org/10.1109/t-ed.1976.18412
Abstract
A method of making ohmic contact to n-type GaAs by means of micro-alloying at 320°C for 90 s, resulting in a specific contact resistance of approximately 0.1 Ω.cm2is described. This technique involves an aluminum overlay which prevents puddling and thus maintains contact geometry. Such contacts, having a relatively high specific contact resistance, have the advantage of being formed by low temperature micro-alloying for short times.Keywords
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