In Situ Studies of Electrochemical Interfaces by Grazing Angle X‐Ray Reflection

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Abstract
Gas phase etching of single‐ and polycrystalline silicon using a mixture of and has been investigated. The process proceeds at room temperature without requiring additional excitation sources. The amount of silicon etched depended on the surface doping polarity. The amount of p‐type silicon etched was lower than that for n‐type silicon, but higher than that for silicon dioxide. The relative roughness of the etched surface depends both on the nature of the surface dopant and on the amount of the silicon etched.